micro-x1 semiconductor group 1 draft a04 1998-04-01 hirel npn silicon rf transistor bfy 181 features hirel discrete and microwave semiconductor for low noise, high gain broadband amplifiers at collector currents from 0.5 ma to 12 ma hermetically sealed microwave package f t = 8 ghz, f = 2.2 db at 2 ghz qualified esa/scc detail spec. no.: 5611/006
bfy 181 semiconductor group 2 draft a04 1998-04-01 electrical characteristics 3) this test assures v (br)ce0 > 12 v. table 2 dc characteristics at t a = 25 c unless otherwise specified parameter symbol limit values unit min. typ. max. collector-base cutoff current v cb = 20 v, i e = 0 i cbo -- 100 m a collector-emitter cutoff current v ce = 12 v, i b = 0.1 m a 3) i cex -- 100 m a collector-base cutoff current v cb = 10 v, i e = 0 i cbo -- 50 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo -- 25 m a emitter-base cutoff current v eb = 2 v, i c = 0 i ebo -- 0.5 m a base-emitter forward voltage i e = 15 ma, i c = 0 v fbe -- 1v dc current gain i c = 5 ma, v ce = 6 v h fe 55 100 175 -
bfy 181 semiconductor group 3 draft a04 1998-04-01 4) table 3 ac characteristics at t a = 25 c unless otherwise specified parameter symbol limit values unit min. typ. max. transition frequency i c = 10 ma, v ce = 5 v, f = 500 mhz i c = 10 ma, v ce = 8 v, f = 500 mhz f t 6.5 - 7.5 8 - - ghz collector-base capacitance v cb = 10 v, v be = vbe = 0, f = 1 mhz c cb - 0.21 0.29 pf collector-emitter capacitance v ce = 10 v, v be = vbe = 0, f = 1 mhz c ce - 0.34 - pf emitter-base capacitance v eb = 0.5 v, v cb = vcb = 0, f = 1 mhz c eb - 0.45 0.6 pf noise figure i c = 4 ma, v ce = 5 v, f = 2 ghz, z s = z sopt f - 2.2 2.9 db power gain i c = 10 ma, v ce = 5 v, f = 2 ghz, z s = z sopt , z l = z lopt g ma 4) 13.5 14.5 - db transducer gain i c = 10 ma, v ce = 5 v, f = 2 ghz, z s = z l = 50 w ? s 21e ? 2 10 11 - db g ma s21 s12 ---------- - kk 2 1 e e () g ms , s21 s12 ---------- - ==
bfy 181 semiconductor group 4 draft a04 1998-04-01 order instructions full type variant including quality level must be specified by the orderer. for hirel discrete and microwave semiconductors the ordering code specifies device family and quality level. ordering form: ordering code: q BFY181 (x) (ql) (ql): quality level ordering example: ordering code: q62702f1715 BFY181 es for BFY181 in esa space quality level further information see our www-pages: e discrete and rf-semiconductors (small signal semiconductors) www.siemens.de/semiconductor/products/35/35.htm e hirel discrete and microwave semiconductors www.siemens.de/semiconductor/products/35/353.htm please contact also our marketing division: tel.: ++89 6362 4480 fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de
bfy 181 semiconductor group 5 draft a04 1998-04-01 figure 1 micro-x1 package x y 1.78 1.02 0.1 0.1 ?1.65 0.1 0.76 0.25 1.05 gxm05552 1 2 3 4 -0.03 +0.05 -0.2 4.2 0.5 0.1
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